中文簡(jiǎn)介

自旋電子學(xué)是利用電子、原子核等基本粒子以及光子自旋的獨(dú)特性質(zhì)而迅速發(fā)展起來(lái)的一門(mén)新興學(xué)科。自旋電子具有特殊的重要性，因?yàn)閭鹘y(tǒng)電子達(dá)到其物理極限。近年來(lái)出現(xiàn)了新型的傳感、存儲(chǔ)和邏輯器件，它們依賴(lài)于產(chǎn)生、操縱和檢測(cè)電子的自旋，以及利用自旋極化電子的電流以磁性納米元件和磁疇壁的形式操縱磁化。自旋電子設(shè)備高度敏感的形式讀取傳感器對(duì)磁記錄的一個(gè)關(guān)鍵組成部分高容量磁盤(pán)驅(qū)動(dòng)器超過(guò)十年:他們使一個(gè)巨大的存儲(chǔ)容量的增加磁盤(pán)驅(qū)動(dòng)器幾個(gè)數(shù)量級(jí),是當(dāng)今信息時(shí)代的關(guān)鍵。固態(tài)存儲(chǔ)器如磁隨機(jī)存取存儲(chǔ)器(MRAM)最近進(jìn)入了市場(chǎng)。其他令人興奮的可能性涉及非常密集和高性能的內(nèi)存存儲(chǔ)設(shè)備，如賽馬場(chǎng)存儲(chǔ)器，以及低功耗磁邏輯，以及自旋電子傳感設(shè)備的應(yīng)用，如診斷生物磁芯片上的實(shí)驗(yàn)室設(shè)備。這些應(yīng)用中有許多需要磁性和半導(dǎo)體材料的集成，以及對(duì)磁性和半導(dǎo)體物理和技術(shù)的基本理解:如果自旋電子學(xué)要成為未來(lái)的電子學(xué)，這一點(diǎn)尤其重要。自旋電子學(xué)包括一個(gè)多學(xué)科的研究努力涉及磁性，半導(dǎo)體電子學(xué)，材料科學(xué)，化學(xué)和生物學(xué)。SPIN旨在為該領(lǐng)域的所有研究人員提供一個(gè)展示研究成果和評(píng)論文章的論壇。該期刊的范圍包括(但不一定限于)以下主題:材料金屬赫斯勒化合物復(fù)合氧化物:反鐵磁性、鐵磁性稀磁半導(dǎo)體稀磁氧化物高性能新型磁性材料半導(dǎo)體電子產(chǎn)品納米器件制造描述自旋注入自旋傳輸自旋轉(zhuǎn)移力矩旋轉(zhuǎn)扭矩振蕩電磁特性的電氣控制有機(jī)自旋電子學(xué)光學(xué)現(xiàn)象和光電子自旋操縱應(yīng)用程序和設(shè)備新穎的記憶和邏輯器件"其他人基礎(chǔ)及跨學(xué)科研究在低維系統(tǒng)中自旋醫(yī)學(xué)旋轉(zhuǎn)其他領(lǐng)域的自旋計(jì)算材料的發(fā)現(xiàn)

　　英文簡(jiǎn)介

Spin electronics is a rapidly emerging field which is based on taking advantage of the unique properties of the spin of the electron, the nucleus and other fundamental particles, as well as that of the photon. Spin electronics has special importance as conventional electronics reaches its physical limitations.Novel sensing, memory and logic devices, which rely on generating, manipulating and detecting the electron's spin, as well as using currents of spin-polarized electrons to manipulate magnetization in the form of magnetic nanoelements and magnetic domain walls, have emerged in recent years.Spin electronic devices in the form of highly sensitive read sensors for magnetic recording have been a key component of high capacity magnetic disk drives for more than a decade: they enabled a vast increase in the storage capacity of disk drives by several orders of magnitude and are key to today's information age.Solid state memory devices such as Magnetic Random Access Memory (MRAM) have recently entered the market. Other exciting possibilities relate to very dense and high performance memory-storage devices such as Racetrack Memory, as well as low power magnetic logic, and applications of spintronic sensing devices such as diagnostic biomagnetic lab-on-a-chip devices. Many of these applications require the integration of magnetic and semiconducting materials and a fundamental understanding of both magnetic and semiconductor physics and technology: this is especially important if spin electronics is to become the electronics of the future.Spin electronics encompasses a multidisciplinary research effort involving magnetism, semiconductor electronics, materials science, chemistry and biology. SPIN aims to provide a forum for the presentation of research and review articles of interest to all researchers in the field.The scope of the journal includes (but is not necessarily limited to) the following topics:MaterialsMetalsHeusler compoundsComplex oxides: antiferromagnetic, ferromagneticDilute magnetic semiconductorsDilute magnetic oxidesHigh performance and emerging magnetic materialsSemiconductor electronicsNanodevicesFabricationCharacterizationSpin injectionSpin transportSpin transfer torqueSpin torque oscillatorsElectrical control of magnetic propertiesOrganic spintronicsOptical phenomena and optoelectronic spin manipulationApplications and devicesNovel memories and logic devicesLab-on-a-chipOthersFundamental and interdisciplinary studiesSpin in low dimensional systemSpin in medical sciencesSpin in other fieldsComputational materials discovery

　　近年期刊自引率趨勢(shì)圖

　　JCR分區(qū)

JCR分區(qū)等級(jí)	JCR所屬學(xué)科	分區(qū)	影響因子
Q3	PHYSICS, APPLIED	Q3	1.849

　　近年期刊影響因子趨勢(shì)圖

　　CiteScore數(shù)值

CiteScore	SJR	SNIP	學(xué)科類(lèi)別	分區(qū)	排名	百分位
1.80	0.304	0.433	大類(lèi)：Engineering 小類(lèi)：Electrical and Electronic Engineering	Q3	455 / 708	35%
			大類(lèi)：Engineering 小類(lèi)：Electronic, Optical and Magnetic Materials	Q3	182 / 259	29%
			大類(lèi)：Engineering 小類(lèi)：Atomic and Molecular Physics, and Optics	Q3	147 / 205	28%

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