中文簡介

1983年，原《真空科學與技術(shù)雜志》拆分后，創(chuàng)辦了《真空科學與技術(shù)雜志A》和《真空科學與技術(shù)雜志B》。JVSTA致力于出版關(guān)于材料、薄膜和等離子體的界面和表面的原始研究報告、信件和評論文章。JVSTA發(fā)布的報告在基本層面上促進了對接口和表面的基本理解，并使用這種理解促進了各種技術(shù)應(yīng)用程序中的最新技術(shù)。范圍包括但不限于以下主題:應(yīng)用和基礎(chǔ)表面科學原子層沉積電子和光子材料及其加工磁性薄膜和界面用于能量轉(zhuǎn)換和儲存的材料和薄膜光伏，包括無機和有機薄膜太陽能電池等離子體科學與技術(shù)，包括等離子體-表面相互作用、等離子體診斷、等離子體沉積和蝕刻以及等離子體在微電子和納米電子領(lǐng)域的應(yīng)用表面工程薄膜沉積、蝕刻、性質(zhì)及特性透射電鏡，包括原位法摩擦學真空科學與技術(shù)

　　英文簡介

In 1983, the two journals, Journal of Vacuum Science and Technology A and B were launched when the original Journal of Vacuum Science and Technology was split.JVSTA is devoted to publishing reports of original research, letters, and review articles on interfaces and surfaces of materials, thin films, and plasmas. JVSTA publishes reports that advance the fundamental understanding of interfaces and surfaces at a fundamental level and that use this understanding to advance the state of the art in various technological applications. The scope includes, but is not limited to, the following topics:Applied and fundamental surface scienceAtomic layer depositionElectronic and photonic materials and their processingMagnetic thin films and interfacesMaterials and thin films for energy conversion and storagePhotovoltaics, including inorganic and organic thin-film solar cellsPlasma science and technology, including plasma-surface interactions, plasma diagnostics plasma deposition and etching, and applications of plasmas to micro- and nanoelectronicsSurface engineeringThin film deposition, etching, properties, and characterizationTransmission electron microscopy, including in situ methodsTribologyVacuum science and technology

　　近年期刊自引率趨勢圖

　　JCR分區(qū)

JCR分區(qū)等級	JCR所屬學科	分區(qū)	影響因子
Q2	PHYSICS, APPLIED	Q2	3.234
	MATERIALS SCIENCE, COATINGS & FILMS	Q3

　　近年期刊影響因子趨勢圖

　　CiteScore數(shù)值

CiteScore	SJR	SNIP	學科類別	分區(qū)	排名	百分位
4.40	0.676	0.992	大類：Materials Science 小類：Surfaces, Coatings and Films	Q2	44 / 129	66%
			大類：Materials Science 小類：Surfaces and Interfaces	Q2	20 / 57	65%
			大類：Materials Science 小類：Condensed Matter Physics	Q2	147 / 415	64%

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