中文簡介

本雜志的宗旨是將下列領(lǐng)域的最新和原創(chuàng)研究成果匯集在一份刊物上發(fā)表:(1)固態(tài)物理和技術(shù)在電子和光電子領(lǐng)域的應(yīng)用，包括理論和器件設(shè)計，并提供適當(dāng)?shù)膶嶒炛С?(2)光學(xué)、電學(xué)、形態(tài)表征技術(shù)和參數(shù)提取技術(shù)，并將實驗應(yīng)用于實際器件;(3)器件的制作與合成，包括器件相關(guān)新材料的生長、光電表征及性能評價;(4)亞微米、納米微電子、光電子器件的物理建模，包括加工、測量、性能評價;(5)具有適當(dāng)實驗備份的固態(tài)器件和工藝的建模和仿真;(6)用于各種應(yīng)用的納米電子和光電子器件，包括光電、傳感、微和納米機(jī)械(MEMS/NEMS)系統(tǒng)、量子計算和通信。重要提示:鑒于TCAD仿真包(Synopsys、Silvaco等)的廣泛可用性，設(shè)備仿真論文應(yīng)與實驗、革命性概念或新的分析方法相結(jié)合。關(guān)于材料生長和表征的論文應(yīng)該與當(dāng)前或未來的器件技術(shù)相關(guān)。投稿類型:原創(chuàng)研究論文、信函(面向高影響力、高質(zhì)量的短篇論文)、邀請評審論文(投稿前請聯(lián)系編輯)。固態(tài)電子學(xué)不發(fā)表筆記或簡短的通訊。關(guān)鍵詞:固態(tài)電子，場效應(yīng)晶體管，半導(dǎo)體(Si, SOI, Ge, III-V, 2D等)，納米器件，新器件概念，制造，表征，建模，記憶，高壓器件，光伏，MEMS/NEMS

　　英文簡介

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.Important: Given the wide availability of TCAD simulation packages (Synopsys, Silvaco, etc.) device simulation papers should be coupled with experiment, revolutionary concepts or novel analytical approaches. Papers on materials growth and characterization should be relevant to a current or future device technology.Types of contributions: Original research papers, letters (intended for high-impact and high-quality short papers) and invited review papers (please contact the editors prior to submission). Solid-State Electronics does not publish notes or brief communications.Keywords: solid state electronics, field effect transistor, semiconductor (Si, SOI, Ge, III-V, 2D, etc.), nano-devices, new device concepts, fabrication, characterization, modeling, memories, high-voltage devices, photovoltaics, MEMS/NEMS

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